CXDM4060P surface mount silicon p-channel enhancement-mode mosfet description: the central semiconductor CXDM4060P is a high current silicon p-channel enhancement-mode mosfet, designed for high speed pulsed amplifier and driver applications. this mosfet features high current, low r ds(on) , low threshold voltage, and low gate charge. marking: full part number maximum ratings: (t a =25c) symbol units drain-source voltage v ds 40 v gate-source voltage v gs 25 v continuous drain current (steady state) i d 6.0 a maximum pulsed drain current, tp=10s i dm 20 a power dissipation p d 1.2 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 104 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =25v, v ds =0 100 na i dss v ds =40v, v gs =0 1.0 a bv dss v gs =0, i d =250a 40 v v gs(th) v gs =v ds , i d =250a 1.0 2.0 3.0 v v sd v gs =0, i s =2.0a 1.2 v r ds(on) v gs =10v, i d =6.0a 48 65 m r ds(on) v gs =4.5v, i d =4.0a 80 95 m c rss v ds =25v, v gs =0, f=1.0mhz 61 pf c iss v ds =25v, v gs =0, f=1.0mhz 750 pf c oss v ds =25v, v gs =0, f=1.0mhz 56 pf q g(tot) v ds =32v, v gs =4.5v, i d =6.0a 6.5 nc q gs v ds =32v, v gs =4.5v, i d =6.0a 3.2 nc q gd v ds =32v, v gs =4.5v, i d =6.0a 2.7 nc t on v ds =20v, v gs =10v, i d =1.0a 18 ns t off r g =3.0, r l =20 64 ns features: ? low r ds(on) (48m typ @ v gs =10v) ? high current (i d =6.0a) ? logic level compatibility applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-89 case r1 (28-march 2013) www.centralsemi.com
CXDM4060P surface mount silicon p-channel enhancement-mode mosfet lead code: 1) gate 2) drain 3) source marking: full part number sot-89 case - mechanical outline pin configuration www.centralsemi.com r1 (28-march 2013)
CXDM4060P surface mount silicon p-channel enhancement-mode mosfet typical electrical characteristics r1 (28-march 2013) www.centralsemi.com
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